X‐parameter modelling of GaN HEMT based on neural network
نویسندگان
چکیده
منابع مشابه
Modelling Reliability in GaN HEMT Devices
In this paper a study of the evolution over time of four different magnitudes in GaN HEMT’s will be presented. The experimental data measured at III-V Lab’s, as a result of a Life Test performed using as test vehicles six different GaN HEMT devices, allow the authors to find a way of modelling reliability by using specific mathematical functions developed to simulate the temporal dependence of ...
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AlGaN/GaN high electron mobility transistors (HEMTs) are very promising for high power applications at microwave frequencies. The heterostructures are usually grown on SiC or sapphire substrates. Sapphire substrates are relatively cheap, but their low thermal conductivity is a major disadvantage. To improve the thermal performance, a hybrid integration of the HEMT onto an AlN carrier substrate ...
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In this paper, we have presented an X band high power amplifier based on MMIC (Monolithic Microwave Integrated Circuit) technology for satellite remote sensing systems. We have used GaN HEMT process with 500 nm gate length technology with VD= 40 V and VG= -2 V in class E structure. The proposed two-stage power amplifier provides 25 dB power gain with maximum output power of 49.3 dBm at 10 GHz. ...
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Pt/AlGaN/AlN/GaN high electron mobility transistors (HEMT) were fabricated and characterized for hydrogen sensing. Pt and Ti/Al/Ni/Au metals were evaporated to form the Schottky contact and the ohmic contact, respectively. The sensors can be operated in either the field effect transistor (FET) mode or the Schottky diode mode. Current changes and time dependence of the sensors under the FET and ...
متن کاملGaN HEMT reliability
0026-2714/$ see front matter 2009 Elsevier Ltd. A doi:10.1016/j.microrel.2009.07.003 * Corresponding author. Tel.: +1 617 253 4764; fax E-mail address: [email protected] (J.A. del Alamo). This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that el...
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ژورنال
عنوان ژورنال: The Journal of Engineering
سال: 2019
ISSN: 2051-3305,2051-3305
DOI: 10.1049/joe.2018.9156